FQP27N25 N-Channel MOSFET rated for 250V drain-source voltage and 25.5A continuous drain current. Features low on-resistance of 110mOhm at 10V gate drive in a TO-220-3 through-hole package.
Mfr Part #:

FQP27N25

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET rated for 250V drain-source voltage and 25.5A continuous drain current. Features low on-resistance of 110mOhm at 10V gate drive in a TO-220-3 through-hole package.
✓ Total Stock: 7,202 pcs

FQP27N25 Available from 3 distributors

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FQP27N25 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FQP27N25 Description

Short technical summary and product information.

The FQP27N25 is an N-Channel enhancement-mode MOSFET manufactured by ON Semiconductor. It is designed for high-voltage switching applications requiring a drain-source voltage rating of 250V and continuous drain current of 25.5A (at case temperature). The device features a maximum on-resistance of 110mOhm when driven with a 10V gate-source voltage, ensuring efficient power handling.

 

Key electrical characteristics include a typical gate charge of 65nC at 10V and input capacitance of 2450pF at 25V drain-source, which influence switching performance. The threshold voltage is specified at a maximum of 5V at 250µA drain current, and the gate-source voltage can withstand up to ±30V. Maximum power dissipation is 180W at case temperature, and the device operates over a junction temperature range of -55°C to 150°C.

 

The MOSFET is housed in a standard TO-220-3 package with through-hole mounting, suitable for easy integration into power circuits. The package provides good thermal performance when mounted on a heatsink. The device is RoHS3 compliant and has a moisture sensitivity level of 1 (unlimited).

FQP27N25 Quick Information

Product Type: MOSFET
Canonical Name: FQP27N25 N-Channel MOSFET, 250V, 25.5A, TO-220-3
Subcategory: N-Channel MOSFET

FQP27N25 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQP27N25 Features

  • N-Channel MOSFET with 250V drain-source rating.
  • Continuous drain current of 25.5A at case temperature.
  • Low on-resistance of 110mOhm at 10V gate drive.
  • TO-220-3 through-hole package for easy mounting.
  • RoHS3 compliant and MSL Level 1 rated.

FQP27N25 Applications

  • Suitable for high-voltage power switching circuits.
  • Used in DC-DC converters and power supplies.
  • Ideal for motor control and inverter applications.
  • Applicable in battery charging and management systems.

FQP27N25 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FQP27N25?

250V.

What is the maximum drain current?

25.5A at case temperature.

What is the on-resistance?

110mOhm maximum at Id=12.75A, Vgs=10V.

What package is the FQP27N25 available in?

TO-220-3 through-hole package.

What is the operating temperature range?

-55°C to 150°C junction temperature.

Is the FQP27N25 RoHS compliant?

Yes, RoHS3 compliant (unverified).

What is the gate charge?

65nC maximum at Vgs=10V.

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