| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,050 pcs
|
2050 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQP20N06L is an N-Channel enhancement mode power MOSFET manufactured by ON Semiconductor. It is designed for high-efficiency power management applications requiring a 60V drain-to-source voltage rating and a continuous drain current of 21A at case temperature (Tc).
The device features a maximum on-resistance (Rds(on)) of 55 milliohms at a gate-source voltage of 10V and a drain current of 10.5A. It has a maximum gate charge of 13 nC at 5V and an input capacitance of 630 pF at 25V drain-source voltage, enabling efficient switching performance. The gate threshold voltage is a maximum of 2.5V at 250µA drain current, and the maximum gate-source voltage rating is ±20V.
The FQP20N06L is housed in a standard TO-220-3 through-hole package, suitable for PCB mounting and heatsinking. It has a maximum power dissipation of 53W at case temperature and an operating junction temperature range of -55°C to 175°C.
The FQP20N06L has a maximum drain-to-source voltage (Vdss) of 60 V.
The maximum continuous drain current (Tc) is 21 A.
The maximum on-resistance (Rds On) is 55 mOhm at a drain current of 10.5 A and a gate-source voltage of 10 V.
The FQP20N06L is available in a TO-220-3 through-hole package.
The operating junction temperature range is -55°C to 175°C.
The maximum gate threshold voltage (Vgs(th)) is 2.5 V at a drain current of 250 µA.
The maximum power dissipation at case temperature (Tc) is 53 W.