| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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410 pcs
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410 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FQP20N06 is an N-Channel enhancement mode power field-effect transistor manufactured by Fairchild Semiconductor using their proprietary planar stripe, DMOS technology. This advanced technology is designed to minimize on-state resistance and provide superior switching performance.
Key electrical specifications include a drain-source breakdown voltage (BVDSS) of 60V and a static drain-source on-resistance (RDS(on)) of 0.06 Ohms at a gate-source voltage (VGS) of 10V and a drain current (ID) of 10A. It can handle a continuous drain current of 20A at 25°C and 14.1A at 100°C, with a pulsed drain current (IDM) of up to 80A.
This MOSFET is well-suited for low-voltage applications such as automotive, DC/DC converters, and high-efficiency switching for power management in portable and battery-operated products. It features a low gate charge (Qg) of 11.5 nC and low reverse transfer capacitance (Crss) of 25 pF, contributing to fast switching speeds. The device is also 100% avalanche tested and has improved dv/dt capability.
The FQP20N06 comes in a TO-220 package, suitable for through-hole mounting. It has a maximum junction temperature rating of 175°C and a thermal resistance (junction-to-case) of 2.85°C/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage (BVDSS) is 60V.
The typical static drain-source on-resistance (RDS(on)) is 0.048 Ohms at VGS = 10V and ID = 10A.
The maximum continuous drain current (ID) is 20A at 25°C.
The operating and storage temperature range is -55°C to +175°C.
The FQP20N06 is available in a TO-220 package.