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FQP1N60 N-Channel MOSFET with 600V drain-source voltage and 1.2A continuous drain current in a TO-220-3 package.
Mfr Part #:

FQP1N60

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET with 600V drain-source voltage and 1.2A continuous drain current in a TO-220-3 package.
✓ Total Stock: 10,000 pcs

FQP1N60 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
10,000 pcs
On Request
10000 pcs On Request 1 On Request On Request On Request On Request On Request
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FQP1N60 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Reverse Recovery Time
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQP1N60 Description

Short technical summary and product information.

The FQP1N60 is an N-Channel MOSFET from On Semiconductor, designed for high-voltage switching applications. It features a 600V drain-source breakdown voltage and a continuous drain current of 1.2A at 25°C case temperature. The device offers a low typical on-resistance of 9.3Ω (max 11.5Ω) at Vgs=10V, ensuring efficient power handling.

 

This MOSFET incorporates advanced QFET technology, providing low gate charge (5.0 nC typical) and low intrinsic capacitances for fast switching performance. It is avalanche rated with a single-pulsed avalanche energy of 50 mJ, enhancing ruggedness in harsh environments. The part is housed in a through-hole TO-220-3 package, offering good thermal performance with a junction-to-case thermal resistance of 3.13°C/W.

 

Key electrical characteristics include a gate threshold voltage range of 3.0V to 5.0V, and a maximum power dissipation of 40W at 25°C. The device operates over a junction temperature range of -55°C to 150°C, making it suitable for industrial and power supply applications.

FQP1N60 Quick Information

Product Type: N-Channel MOSFET
Series: QFET
Canonical Name: FQP1N60 N-Channel MOSFET 600V 1.2A TO-220-3
Subcategory: Single N-Channel Power MOSFET

FQP1N60 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQP1N60 Features

  • 600V drain-source breakdown voltage.
  • 1.2A continuous drain current.
  • Low on-resistance of 11.5Ω max.
  • Low gate charge of 5.0 nC typical.
  • Avalanche rated for 50 mJ.

FQP1N60 Applications

  • Ideal for power supply switching circuits.
  • Used in AC-DC converter designs.
  • Suitable for motor control applications.
  • Can be used in lighting ballasts.

FQP1N60 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FQP1N60?

The drain-source breakdown voltage is 600V (minimum).

What is the continuous drain current rating?

The continuous drain current is 1.2A at 25°C case temperature, and 0.76A at 100°C.

What is the package type of the FQP1N60?

The package is TO-220-3 (through-hole).

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the FQP1N60 RoHS compliant?

The part is listed as RoHS3 compliant, but this status is unverified and has low confidence.

What is the typical on-resistance?

The typical on-resistance is 9.3Ω, with a maximum of 11.5Ω at Vgs=10V and Id=0.6A.

What is the gate charge of the FQP1N60?

The total gate charge is 5.0 nC typical, 6.0 nC maximum at Vgs=10V.

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