| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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10,000 pcs
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10000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FQP1N50 is an N-Channel MOSFET from ON Semiconductor designed for high-voltage switching applications. It features a maximum drain-to-source voltage of 500V and a continuous drain current of 1.4A at case temperature.
Key electrical characteristics include a maximum on-resistance of 9Ω at 700mA and 10V gate drive, a gate threshold voltage of 5V at 250µA, and a maximum gate charge of 5.5nC at 10V. Input capacitance is 150pF at 25V drain-source.
The device is capable of dissipating up to 40W at case temperature and operates over a junction temperature range of -55°C to 150°C. It is housed in a standard TO-220-3 package suitable for through-hole mounting.
500V.
TO-220-3.
-55°C to 150°C (junction temperature).
Maximum 5V at 250µA drain current.
9Ω at 700mA drain current and 10V gate-source voltage.
1.4A at case temperature.