| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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332 pcs
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332 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FQP19N20C is an N-Channel enhancement mode power MOSFET produced using Fairchild's proprietary planar stripe, DMOS technology. This advanced technology is tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses. It is well-suited for high efficiency switching DC/DC converters, switch mode power supplies, and motor controls.
Key electrical characteristics include a continuous drain current of 19.0A at 25°C, a drain-source breakdown voltage of 200V, and a typical on-state resistance of 0.17 Ohms at VGS = 10V. The device also features a low gate charge of 40.5 nC and a low Crss of 85 pF, contributing to fast switching performance. It has undergone 100% avalanche testing and offers improved dv/dt capability.
The FQP19N20C is available in a TO-220 package and is designed for through-hole mounting. It operates within a temperature range of -55°C to +150°C. The thermal resistance from junction to case is 0.9°C/W, and junction to ambient is 62.5°C/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 200V.
The typical on-state resistance is 0.17 Ohms at VGS = 10V.
The continuous drain current is 19A at 25°C.
The operating and storage temperature range is -55°C to +150°C.
The FQP19N20C is available in TO-220 and TO-220F packages.