| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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24,000 pcs
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24000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FQP19N20C is an N-Channel MOSFET from ON Semiconductor designed for medium-power switching applications. It features a maximum drain-source voltage of 200V and a continuous drain current of 19A at 25°C case temperature (12.1A at 100°C). The device offers a low on-resistance of 170mOhm at 9.5A drain current with a 10V gate drive. Gate charge is 53nC maximum (40.5nC typical), and input capacitance is 1080pF at 25V drain-source, making it suitable for moderate-speed switching.
The MOSFET is avalanche rated with a single-pulse avalanche energy of 433mJ. Maximum power dissipation is 139W at 25°C case temperature, with a junction-to-case thermal resistance of 0.9°C/W. The operating junction temperature range is -55°C to 150°C.
The device is packaged in a TO-220-3 through-hole package, which allows easy mounting on a heatsink. It is RoHS3 compliant and Pb-free, meeting current environmental standards. Typical applications include power supplies, motor drives, DC-DC converters, and switching regulators.
200V.
TO-220-3 through-hole package.
-55°C to 150°C (junction).
Yes, it is RoHS3 compliant and Pb-free.
19A.
40.5 nC at 10V (typical), 53 nC max.
139W at 25°C case temperature.