| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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51,000 pcs
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51000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQP19N20-T is an N-Channel enhancement-mode MOSFET manufactured by On Semiconductor. It is designed for high-efficiency power switching applications requiring a 200V drain-source breakdown voltage and a continuous drain current rating of 19.4A at case temperature (Tc).
Key electrical characteristics include a maximum drain-source on-resistance of 150mOhm at a gate-source voltage of 10V and a drain current of 9.7A. The device has a maximum gate charge of 40nC at Vgs=10V and an input capacitance of 1600pF at Vds=25V, enabling efficient switching performance. The gate threshold voltage is a maximum of 5V at Id=250µA, and the maximum gate-source voltage is ±30V.
The FQP19N20-T is housed in a through-hole TO-220-3 package, suitable for mounting on a heatsink for thermal management. It can dissipate up to 140W at case temperature and operates over a junction temperature range of -55°C to 150°C.
The maximum drain-source breakdown voltage (Vdss) is 200 V.
The maximum continuous drain current (Id) at case temperature (Tc) is 19.4 A.
The maximum drain-source on-resistance (Rds On) is 150 mOhm at a gate-source voltage of 10 V and a drain current of 9.7 A.
The FQP19N20-T is available in a TO-220-3 through-hole package.
The operating junction temperature range is -55°C to 150°C.
The RoHS status is listed as RoHS3 Compliant, but this information is unverified and should be confirmed with official documentation.