DistyParts Icon
FQP19N20 The FQP19N20 is an N-Channel MOSFET from On Semiconductor with a drain-source voltage of 200V and continuous drain current of 19.4A. It features a low on-resistance of 150mOhm and comes in a TO-220-3 through-hole package.
Mfr Part #:

FQP19N20

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FQP19N20 is an N-Channel MOSFET from On Semiconductor with a drain-source voltage of 200V and continuous drain current of 19.4A. It features a low on-resistance of 150mOhm and comes in a TO-220-3 through-hole package.
✓ Total Stock: 9,000 pcs

FQP19N20 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
9,000 pcs
On Request
9000 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FQP19N20 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
View Similar Products (0)

FQP19N20 Description

Short technical summary and product information.

The FQP19N20 is an N-Channel enhancement mode MOSFET designed for high-efficiency power switching applications. It is manufactured by On Semiconductor and offers a drain-source breakdown voltage of 200V and a continuous drain current of 19.4A at case temperature.

 

Electrical characteristics include a maximum on-resistance of 150mOhm at Vgs=10V and Id=9.7A, a typical gate threshold voltage of 5V at Id=250µA, and a total gate charge of 40nC at Vgs=10V. Input capacitance is specified at 1600pF at Vds=25V, and the device can operate with gate-source voltages up to ±30V.

 

The MOSFET is rated for maximum power dissipation of 140W at case temperature and can operate over a junction temperature range of -55°C to 150°C. It is housed in a standard TO-220-3 through-hole package, making it suitable for board-level power designs with proper heatsinking.

FQP19N20 Quick Information

Product Type: MOSFET
Canonical Name: FQP19N20 N-Channel MOSFET
Subcategory: Single MOSFET

FQP19N20 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQP19N20 Features

  • N-Channel MOSFET with 200V drain-source voltage.
  • Continuous drain current rating of 19.4A.
  • Low on-resistance of 150 milliohms.
  • Input capacitance of 1600 picofarads.
  • Maximum power dissipation of 140 watts.

FQP19N20 Applications

  • Power management and switching applications.
  • Motor drive and inverter circuits.
  • DC-DC converters and power supplies.
  • Battery protection and charging systems.

FQP19N20 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FQP19N20?

A maximum of 200V.

What is the maximum continuous drain current?

19.4A at case temperature.

What package does the FQP19N20 come in?

TO-220-3 through-hole package.

What is the operating temperature range?

-55°C to 150°C junction temperature.

Is the FQP19N20 RoHS compliant?

It is listed as RoHS3 Compliant, but this information is unverified.

What is the on-resistance of the FQP19N20?

Maximum 150mOhm at Vgs=10V and Id=9.7A.

What is the total gate charge?

Maximum 40nC at Vgs=10V.

Home

Categories