| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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51 pcs
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51 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FQP19N10L is an N-Channel enhancement mode power MOSFET manufactured using Fairchild's planar stripe DMOS technology. It is designed for low voltage applications requiring high efficiency switching and ruggedness.
Key specifications include a drain-source voltage rating of 100V, continuous drain current of 19A at 25°C, and a low maximum on-resistance of 100mΩ at VGS=10V. The device features a typical gate charge of 14nC and low reverse transfer capacitance (Crss) of 35pF, enabling fast switching performance.
This Logic Level MOSFET can be driven with 5V or 10V gate voltages. It is 100% avalanche tested and offers improved dv/dt capability, with a maximum junction temperature of 175°C. The device is housed in a TO-220-3 through-hole package, suitable for easy heatsink attachment.
Typical applications include high efficiency switching DC/DC converters and DC motor control circuits. The rugged design makes it suitable for power management and switching power supplies.
100V.
TO-220-3.
-55°C to 175°C (junction).
RoHS3 Compliant (unverified).
14 nC.
75W.
±20V.