| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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30,404 pcs
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30404 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
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The FQP18N50V2 is an N-Channel enhancement mode power MOSFET from On Semiconductor (originally Fairchild Semiconductor). It utilizes planar stripe DMOS technology to minimize on-state resistance and provide superior switching performance. Key specifications include a drain-source voltage rating of 500V, continuous drain current of 18A at 25°C, and typical on-resistance of 0.265 Ohm at Vgs=10V. The device offers low gate charge (typical 42 nC) and low reverse transfer capacitance (11 pF), enabling fast switching. It is 100% avalanche tested with a single pulse avalanche energy rating of 330 mJ. The MOSFET is packaged in a TO-220-3 through-hole package with a maximum power dissipation of 208W at case temperature 25°C. It operates over a junction temperature range of -55°C to 150°C. This device is well suited for high-efficiency switched mode power supplies, active power factor correction, and electronic lamp ballasts in half-bridge topologies.
The drain-source voltage rating is 500 V.
The package is TO-220-3.
The operating junction temperature range is -55°C to 150°C.
The device is listed as RoHS3 Compliant, but this information is unverified.
The continuous drain current is 18 A at case temperature 25°C.
The typical on-resistance is 0.265 Ohm at Id=9A, Vgs=10V.
The typical gate charge is 42 nC at Vgs=10V.