FQP17P06 FQP17P06 is a P-Channel MOSFET from On Semiconductor. It offers -60V drain-source voltage, -17A continuous drain current, and 120mOhm on-resistance in a TO-220-3 through-hole package.
Mfr Part #:

FQP17P06

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
FQP17P06 is a P-Channel MOSFET from On Semiconductor. It offers -60V drain-source voltage, -17A continuous drain current, and 120mOhm on-resistance in a TO-220-3 through-hole package.
✓ Total Stock: 25,827 pcs

FQP17P06 Available from 4 distributors

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FQP17P06 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FQP17P06 Description

Short technical summary and product information.

The FQP17P06 is a P-Channel enhancement mode power MOSFET manufactured by On Semiconductor. It uses planar stripe and DMOS technology to achieve low on-state resistance and high switching performance. This device is designed for applications such as switched mode power supplies, audio amplifiers, DC motor control, and variable switching power supplies.

 

The MOSFET has a maximum drain-source voltage of -60V and a continuous drain current rating of -17A at 25°C case temperature. Maximum on-resistance is 120mOhm at VGS = -10V and ID = -8.5A. Gate charge is rated at 27nC maximum, and input capacitance is 900pF maximum. The device can dissipate up to 79W at 25°C case temperature and operates over a junction temperature range of -55°C to +175°C. It is also 100% avalanche tested and rated for 300mJ single pulsed avalanche energy.

 

The FQP17P06 comes in a TO-220-3 through-hole package. Thermal resistance from junction to case is 1.9°C/W, allowing effective heat sinking for high-power applications. The device is Pb-Free and Halide Free, meeting environmental requirements.

 

With its robust electrical characteristics and proven technology, the FQP17P06 is a reliable choice for power conversion, motor control, and audio amplification circuits.

FQP17P06 Quick Information

Product Type: P-Channel MOSFET
Series: QFET
Canonical Name: P-Channel MOSFET, -60V, -17A, TO-220-3
Subcategory: Single MOSFET

FQP17P06 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FQP17P06 Features

  • P-Channel enhancement mode power MOSFET.
  • Low on-resistance of 120mOhm.
  • Rated for -60V and -17A current.
  • High avalanche energy of 300mJ.
  • Pb-Free and Halide Free device.

FQP17P06 Applications

  • Suitable for switched mode power supplies.
  • Used in audio amplifier output stages.
  • Ideal for DC motor control circuits.
  • Designed for variable switching power supplies.

FQP17P06 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FQP17P06?

-60V maximum.

What package does the FQP17P06 come in?

TO-220-3 through-hole package.

What is the operating temperature range?

-55°C to +175°C (junction temperature).

Is the FQP17P06 RoHS compliant?

The FQP17P06 is listed as RoHS3 compliant. It is also Pb-Free and Halide Free per the datasheet.

What is the maximum drain current of the FQP17P06?

-17A continuous at TC=25°C, -12A at TC=100°C, and -68A pulsed.

What is the on-resistance of the FQP17P06?

120mOhm maximum at VGS = -10V and ID = -8.5A.

Does the FQP17P06 support avalanche energy?

Yes, it is rated for 300mJ single pulsed avalanche energy and is 100% avalanche tested.

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