FQP17N40 N-Channel power MOSFET rated at 400V drain-source voltage and 16A continuous drain current, with 270mOhm typical on-resistance.
Mfr Part #:

FQP17N40

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel power MOSFET rated at 400V drain-source voltage and 16A continuous drain current, with 270mOhm typical on-resistance.
✓ Total Stock: 5,500 pcs

FQP17N40 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,000 pcs
3000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,500 pcs
2500 pcs On Request 1 On Request On Request On Request On Request On Request

FQP17N40 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FQP17N40 Description

Short technical summary and product information.

The FQP17N40 is an N-Channel enhancement mode power MOSFET manufactured by On Semiconductor using their proprietary planar stripe and DMOS technology. It is designed to offer low on-state resistance and superior switching performance combined with high avalanche energy capability.

 

Key electrical ratings include a 400V maximum drain-source voltage and a continuous drain current of 16A at 25°C case temperature. The device features a maximum drain-source on-resistance of 270 milliohms at a gate drive of 10V and a typical gate charge of 45nC, making it suitable for efficient switching applications. The MOSFET is also 100% avalanche tested, with a single pulsed avalanche energy rating of 1000mJ.

 

The FQP17N40 is supplied in a TO-220-3 through-hole package, allowing for easy mounting on heatsinks for thermal management. It is Pb-Free and suitable for use in switched-mode power supplies, active power factor correction circuits, and electronic lamp ballasts.

FQP17N40 Quick Information

Product Type: N-Channel Power MOSFET
Canonical Name: FQP17N40 N-Channel MOSFET, 400V, 16A, TO-220-3
Subcategory: Single N-Channel Power MOSFET

FQP17N40 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

FQP17N40 Features

  • 400V drain-source voltage rating.
  • 16A continuous drain current at 25°C.
  • 270mOhm typical on-resistance at 10V gate drive.
  • Low gate charge of 45nC typical.
  • 100% avalanche tested up to 1000mJ.

FQP17N40 Applications

  • Suitable for switched-mode power supplies.
  • Used in active power factor correction circuits.
  • Ideal for electronic lamp ballasts.

FQP17N40 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FQP17N40?

The maximum drain-source voltage is 400V.

What package is the FQP17N40 available in?

It is offered in a TO-220-3 through-hole package.

What is the operating temperature range?

The junction temperature range is -55°C to 150°C.

Is the FQP17N40 RoHS compliant?

The part is listed as RoHS3 Compliant, but this is unverified and should be treated as low confidence.

What is the typical gate charge of this MOSFET?

The typical gate charge is 45nC at VGS = 10V.

What is the maximum continuous drain current at 25°C?

The maximum continuous drain current at Tc=25°C is 16A.

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