| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
15,000 pcs
|
15000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Lead Style |
The FQP16N25C-F105 is a POWER FIELD-EFFECT TRANSISTOR manufactured by On Semiconductor. This MOSFET is designed for power switching applications.
Key electrical specifications include a maximum Drain-Source Voltage (Vds) of 25V at 25°C. Other parameters such as continuous Drain Current (Id), Drain-Source On-Resistance (Rds On), Gate Threshold Voltage (Vgs(th)), Gate Charge (Qg), maximum Gate-Source Voltage (Vgs), and Input Capacitance (Ciss) are not specified in the available data.
Further details regarding its package type, mounting, and specific application suitability would typically be found in the datasheet. This component is part of the broader category of Specialized ICs, though its primary function is that of a MOSFET.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.75 | $0.75 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Vds is 25V at 25°C.
The RoHS status is RoHS3 Compliant.
The MSL is 1 Unlimited.