| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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740 pcs
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740 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Vgs(th) (Max) @ Id |
The FQP16N25C is an N-Channel enhancement mode power MOSFET manufactured by On Semiconductor (formerly Fairchild Semiconductor). It is designed using planar stripe and DMOS technology to achieve low on-state resistance and high switching performance.
Key electrical specifications include a drain-source voltage (Vdss) of 250V, continuous drain current of 15.6A at 25°C case temperature, and a maximum on-resistance of 0.27 ohms at Vgs=10V. The device features low gate charge (typical 41 nC) and low reverse transfer capacitance (typical 68 pF), making it suitable for high-frequency switching applications.
The FQP16N25C is offered in a through-hole TO-220-3 package with a junction-to-case thermal resistance of 0.9°C/W. It is 100% avalanche tested and rated for single pulsed avalanche energy up to 410 mJ. The operating junction temperature range is -55°C to +150°C.
The maximum drain-source voltage (Vdss) is 250V.
The continuous drain current is 15.6A at a case temperature of 25°C, and 9.8A at 100°C.
The typical on-resistance is 0.22 ohms, with a maximum of 0.27 ohms at Vgs=10V and Id=7.8A.
The FQP16N25C is available in a through-hole TO-220-3 package.
The operating junction temperature range is -55°C to +150°C.
The FQP16N25C is listed as RoHS3 compliant, but this status is unverified.
The gate threshold voltage ranges from 2.0V to 4.0V at Vds=Vgs and Id=250µA.