| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FQP16N25 is an N-Channel enhancement-mode MOSFET manufactured by ON Semiconductor, part of the legacy Fairchild portfolio. It is designed for high-efficiency power switching and general-purpose switching applications.
Key electrical specifications include a maximum drain-source voltage of 250V, continuous drain current of 16A (at case temperature), and a low on-resistance of 230mΩ at 8A and 10V gate drive. The gate threshold voltage is 5V maximum at 250µA, and the device can withstand ±30V gate-source voltage. Input capacitance is 1200pF at 25V, and total gate charge is 35nC at 10V.
The device is packaged in a TO-220-3 through-hole package, suitable for standard PCB mounting. It is rated for power dissipation up to 142W at case temperature and operates over a junction temperature range of -55°C to 150°C.
250 V.
16 A at case temperature.
230 mΩ maximum at 8 A drain current and 10 V gate-source voltage.
TO-220-3 through-hole package.
-55°C to 150°C junction temperature.
5 V maximum at 250 µA drain current.
The part is flagged as RoHS3 compliant, but this information is unverified.