| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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5,750 pcs
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5750 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
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The FQP16N15 is an N-Channel MOSFET manufactured by On Semiconductor. It is designed for switching and amplification applications requiring a drain-to-source voltage of up to 150V and a continuous drain current of up to 16.4A at case temperature. The device features a maximum on-resistance of 160 milliohms at a gate-to-source voltage of 10V and a drain current of 8.2A, enabling efficient power handling.
The MOSFET has a maximum gate threshold voltage of 4V at a drain current of 250 microamps, and a maximum gate charge of 30 nanocoulombs at 10V. Its input capacitance is rated at 910 picofarads at 25V drain-source voltage. The device can dissipate up to 108W at case temperature and operates over a junction temperature range of -55°C to 175°C.
This component is housed in a TO-220-3 package with through-hole mounting, suitable for PCB designs requiring manual or automated insertion. The package provides good thermal performance for power applications. The FQP16N15 is suitable for use in power supplies, motor control, and other power switching circuits where high voltage and current handling are required.
The maximum drain-to-source voltage (Vdss) is 150V.
The maximum continuous drain current is 16.4A at case temperature.
The maximum on-resistance is 160 milliohms at a drain current of 8.2A and gate-to-source voltage of 10V.
The operating junction temperature range is -55°C to 175°C.
The FQP16N15 is available in a TO-220-3 through-hole package.
The part is marked as RoHS3 compliant, but this status is unverified and should be confirmed with the manufacturer.