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FQP14N30 FQP14N30 is an N-Channel Power MOSFET from ON Semiconductor rated for 300V drain-source voltage and 14.4A continuous drain current. It features 290mΩ maximum on-resistance at 10V gate drive.
Mfr Part #:

FQP14N30

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
FQP14N30 is an N-Channel Power MOSFET from ON Semiconductor rated for 300V drain-source voltage and 14.4A continuous drain current. It features 290mΩ maximum on-resistance at 10V gate drive.
✓ Total Stock: 220 pcs

FQP14N30 Available from 1 distributor

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220 pcs
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FQP14N30 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQP14N30 Description

Short technical summary and product information.

The FQP14N30 is an N-Channel enhancement-mode MOSFET manufactured by ON Semiconductor. It is designed for high-voltage power switching applications.

 

The device features a drain-source voltage (Vdss) of 300V, continuous drain current of 14.4A at case temperature, and a maximum on-resistance of 290mΩ at Vgs=10V and Id=7.2A. Gate charge is 40nC at 10V and input capacitance is 1360pF at Vds=25V. The gate threshold voltage is 5V maximum at 250µA, and the maximum gate-source voltage is ±30V.

 

The FQP14N30 is supplied in a TO-220-3 through-hole package. It operates over a junction temperature range of -55°C to 150°C with a maximum power dissipation of 147W at case temperature.

FQP14N30 Quick Information

Product Type: MOSFET
Canonical Name: FQP14N30 N-Channel MOSFET, 300V, 14.4A, TO-220-3
Subcategory: Power MOSFET

FQP14N30 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FQP14N30 Features

  • N-Channel MOSFET with 300V drain-source voltage.
  • Continuous drain current rating of 14.4A.
  • Low on-resistance of 290mΩ at 10V gate drive.
  • Gate charge of 40nC for efficient switching.
  • TO-220-3 through-hole package for easy mounting.

FQP14N30 Applications

  • Suitable for high-voltage power supply circuits.
  • Used in DC-DC converter topologies.

FQP14N30 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FQP14N30?

300 V maximum.

What package does the FQP14N30 come in?

TO-220-3.

What is the operating temperature range?

-55°C to 150°C junction temperature.

Is the FQP14N30 RoHS compliant?

It is indicated as RoHS compliant, but this status is unverified. Please confirm with manufacturer.

What is the maximum continuous drain current?

14.4 A at case temperature (Tc).

What is the typical on-resistance?

Maximum 290 mΩ at Vgs=10V and Id=7.2A.

What is the gate charge?

40 nC at Vgs=10V.

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