Mfr Part #:

FQP13N50C

N-Channel MOSFET rated at 500V and 13A with 480mΩ on-resistance. Suitable for high-efficiency switched-mode power supplies and active PFC.

✓ Total Stock: 4,250 pcs

FQP13N50C Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	4,000 pcs On Request	4000 pcs	On Request	1	On Request	On Request	21+20+	On Request	On Request
Partservice ✓ Non-Authorised Inventory information	250 pcs On Request	250 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

FQP13N50C Description

Short technical summary and product information.

The FQP13N50C is an N-Channel enhancement mode power MOSFET from On Semiconductor’s QFET family, built with planar stripe DMOS technology. It is designed to minimize on-state resistance and deliver superior switching performance while withstanding high energy pulses in avalanche and commutation modes.

Key electrical characteristics include a drain-source voltage of 500V, a continuous drain current of 13A at Tc=25°C, and a maximum on-resistance of 480mΩ at Vgs=10V and Id=6.5A. The device features low gate charge (typical 43nC) and low reverse transfer capacitance (typical 20pF), enabling efficient high-frequency operation. It is 100% avalanche tested with a single pulse avalanche energy rating of 860mJ.

The MOSFET comes in a TO-220-3 through-hole package, offering robust thermal performance with a junction-to-case thermal resistance of 0.64°C/W and a maximum power dissipation of 195W at Tc=25°C. The operating junction temperature range is -55°C to +150°C.

Typical applications include high-efficiency switched-mode power supplies, active power factor correction circuits, and electronic lamp ballasts using half-bridge topologies. Note: This part is discontinued and not recommended for new designs per the datasheet.

FQP13N50C Quick Information

Product Type: MOSFET

Canonical Name: FQP13N50C N-Channel QFET MOSFET 500V 13A

Subcategory: Single MOSFET

FQP13N50C Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

FQP13N50C Features

N-Channel QFET MOSFET rated for 500V.
13A continuous drain current capability.
Low on-resistance of 480 mOhm maximum.
Low gate charge of 43 nC typical.
TO-220-3 through-hole package.

FQP13N50C Applications

High efficiency switched-mode power supplies.
Active power factor correction circuits.
Electronic lamp ballasts in half-bridge topology.
AC-DC converters and DC-DC converters.

FQP13N50C FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating of the FQP13N50C?

500 V.

What is the continuous drain current of the FQP13N50C?

13 A at Tc=25°C.

What is the on-resistance of the FQP13N50C?

480 mΩ maximum at Vgs=10V and Id=6.5A.

What package does the FQP13N50C come in?

TO-220-3 through-hole.

What is the operating temperature range of the FQP13N50C?

-55°C to +150°C (junction).

What is the maximum gate-source voltage for the FQP13N50C?

±30 V.

Is the FQP13N50C RoHS compliant?

RoHS3 Compliant (unverified, low confidence).

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
Current	13 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	43 nC (Typ) / 56 nC (Max) @ 10V
Input Capacitance (Ciss) (Max) @ Vds	2055 pF @ 25 V
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	195 W
Rds On (Max) @ Id, Vgs	480 mOhm @ 6.5A, 10V
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±30 V
Vgs(th) (Max) @ Id	4V @ 250µA