| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,000 pcs
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2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FQP13N50 is an N-Channel enhancement-mode MOSFET manufactured by ON Semiconductor. It is designed for high-voltage switching applications with a maximum drain-source voltage of 500V and continuous drain current of 12.5A at case temperature. The device offers a maximum on-resistance of 430mOhm at 6.25A and 10V gate drive, ensuring efficient power conversion.
With a maximum gate charge of 60nC and input capacitance of 2300pF, the FQP13N50 is suitable for moderate-frequency switching circuits. The maximum power dissipation is 170W, and the operating junction temperature range spans -55°C to 150°C, providing robust thermal performance.
The MOSFET is packaged in a standard TO-220-3 through-hole package, which facilitates easy mounting on heatsinks for thermal management. The gate threshold voltage is 5V maximum, and the recommended drive voltage is 10V to achieve minimum on-resistance. This component is RoHS3 compliant and has an MSL rating of 1 (unlimited).
The maximum drain-source voltage is 500V.
The continuous drain current is 12.5A at case temperature.
The package is TO-220-3, through-hole mounting.
The operating junction temperature range is -55°C to 150°C.
The part is listed as RoHS3 Compliant, but this is unverified.
The maximum on-resistance is 430mOhm at 6.25A and 10V gate drive.
The maximum gate charge is 60nC at 10V gate-source voltage.