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FQP13N10L The FQP13N10L is a 100V, 12.8A N-Channel MOSFET from ON Semiconductor. It is packaged in a TO-220-3 through-hole package.
Mfr Part #:

FQP13N10L

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Mfr Name: On Semiconductor
On Semiconductor
The FQP13N10L is a 100V, 12.8A N-Channel MOSFET from ON Semiconductor. It is packaged in a TO-220-3 through-hole package.
✓ Total Stock: 11,886 pcs

FQP13N10L Available from 1 distributor

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FQP13N10L Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQP13N10L Description

Short technical summary and product information.

The FQP13N10L is an N-Channel MOSFET manufactured by ON Semiconductor. It features a drain-to-source voltage (Vdss) of 100V and a continuous drain current of 12.8A at Tc. The device exhibits a maximum on-resistance (Rds(on)) of 180 mOhm at Vgs=10V and Id=6.4A.

 

This MOSFET utilizes MOSFET (Metal Oxide) technology and requires a gate drive voltage of 5V or 10V. It has a maximum gate charge (Qg) of 12 nC at Vgs=5V, and a maximum input capacitance (Ciss) of 520 pF at Vds=25V. The maximum gate threshold voltage (Vgs(th)) is 2V at Id=250µA, with a maximum Vgs rating of ±20V.

 

The device is capable of dissipating up to 65W of power at Tc and operates over a junction temperature range of -55°C to 175°C. It is offered in a TO-220-3 through-hole package, making it suitable for through-hole mounting on PCBs.

 

RoHS3 compliance is indicated but has not been verified against the datasheet.

FQP13N10L Quick Information

Product Type: Single N-Channel MOSFET
Canonical Name: FQP13N10L N-Channel MOSFET 100V 12.8A TO-220-3
Subcategory: Single N-Channel MOSFET

FQP13N10L Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQP13N10L Features

  • N-Channel MOSFET with 100V drain-to-source voltage.
  • Continuous drain current rated at 12.8A.
  • Low on-resistance of 180 mOhm at 10V gate drive.
  • High power dissipation capability of 65W.
  • Wide operating temperature range from -55°C to 175°C.

FQP13N10L Applications

  • Suitable for power management circuits.
  • Used in switching regulators.
  • Ideal for load switching applications.
  • Applicable in DC-DC converter designs.

FQP13N10L FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating of the FQP13N10L?

100V.

What package type is the FQP13N10L offered in?

TO-220-3.

What is the operating temperature range of the FQP13N10L?

-55°C to 175°C (junction).

Is the FQP13N10L RoHS compliant?

Yes, it is listed as RoHS3 compliant, but this has not been verified against the datasheet.

What is the maximum drain current of the FQP13N10L?

12.8A at Tc.

What is the on-resistance of the FQP13N10L?

180 mOhm maximum at Vgs=10V and Id=6.4A.

What is the mounting type for the FQP13N10L?

Through Hole (TO-220-3).

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