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FQP13N06L N-Channel MOSFET with 60V drain-source voltage and 13.6A drain current. Housed in a TO-220-3 through-hole package.
Mfr Part #:

FQP13N06L

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET with 60V drain-source voltage and 13.6A drain current. Housed in a TO-220-3 through-hole package.
✓ Total Stock: 4,130 pcs

FQP13N06L Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
4,000 pcs
On Request
4000 pcs On Request 1 On Request On Request On Request On Request On Request
Bristol Electronics ✓
Non-Authorised Inventory information
130 pcs
On Request
130 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FQP13N06L Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQP13N06L Description

Short technical summary and product information.

The FQP13N06L is an N-Channel MOSFET from ON Semiconductor, designed for general-purpose switching applications. It features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 13.6A at case temperature. The on-resistance (Rds(on)) is typically 110 mOhm at a gate drive of 10V and 6.8A drain current.

 

Electrical characteristics include a maximum gate threshold voltage of 2.5V at 250µA, a gate charge of 6.4 nC at 5V, and an input capacitance of 350 pF at 25V drain-source. The device supports gate drive voltages of 5V and 10V, making it compatible with both 5V and 10V logic levels.

 

The MOSFET is housed in a TO-220-3 through-hole package, suitable for easy mounting on PCBs. It can dissipate up to 45W of power at case temperature and operates over a junction temperature range of -55°C to 175°C. This part is RoHS3 compliant (unverified) and has an MSL rating of Level 1.

FQP13N06L Quick Information

Product Type: MOSFET
Canonical Name: FQP13N06L N-Channel MOSFET
Subcategory: N-Channel MOSFET

FQP13N06L Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQP13N06L Features

  • N-Channel MOSFET with 60V drain-source voltage.
  • 13.6A continuous drain current rating.
  • Low on-resistance of 110 mOhm at 10V.
  • Through-hole TO-220-3 package.
  • Wide operating temperature range -55°C to 175°C.

FQP13N06L Applications

  • Used in power management circuits.
  • Suitable for DC-DC converters.
  • Ideal for motor control applications.
  • Can be used in load switching.

FQP13N06L FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FQP13N06L?

60V.

What package does the FQP13N06L come in?

TO-220-3 through-hole package.

What is the operating temperature range?

-55°C to 175°C.

Is the FQP13N06L RoHS compliant?

RoHS3 compliant (unverified).

What is the gate threshold voltage?

Maximum 2.5V at 250µA.

What is the maximum drain current?

13.6A at case temperature.

What is the on-resistance?

110 mOhm at 6.8A and 10V gate drive.

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