| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,200 pcs
|
3200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FQP12P10 is a P-Channel enhancement mode MOSFET manufactured by ON Semiconductor. It features a maximum drain-to-source voltage (Vdss) of 100V and a continuous drain current of 11.5A at case temperature (Tc). The device offers a maximum on-resistance of 290 mOhm at 5.75A and 10V gate drive, making it suitable for power switching applications.
With a maximum gate charge of 27 nC at 10V and input capacitance of 800 pF at 25V, the FQP12P10 provides moderate switching performance. The gate threshold voltage is 4V at 250µA, and the maximum gate-source voltage is ±30V. The device can dissipate up to 75W at case temperature.
The MOSFET is packaged in a standard TO-220-3 through-hole package, suitable for PCB mounting with heatsinking. It operates over a junction temperature range of -55°C to 175°C. The part is RoHS3 compliant and has an MSL of 1 (unlimited).
100V.
TO-220-3 through-hole package.
-55°C to 175°C (junction).
Yes, RoHS3 compliant (unverified).
27 nC at 10V.
290 mOhm at 5.75A and 10V.
4V at 250µA.