| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
869 pcs
|
869 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
800 pcs
|
800 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request | |
|
50 pcs
|
50 pcs | On Request | 1 | On Request | On Request | 418 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQP12N60C is an N-Channel enhancement-mode MOSFET manufactured by On Semiconductor (formerly Fairchild Semiconductor). It is designed for high-voltage switching applications, with a drain-to-source voltage rating of 600V and a continuous drain current of 12A at case temperature (Tc).
The device features a low on-state resistance of 650 mΩ maximum at a gate drive of 10V and 6A drain current, ensuring efficient power conversion. The gate threshold voltage is 4V maximum at 250 µA drain current, and the maximum gate-to-source voltage is ±30V. The MOSFET can handle up to 225W of power dissipation at Tc, and operates over a junction temperature range of -55°C to +150°C.
For switching performance, the input capacitance is 2290 pF at 25V drain-source bias, and the total gate charge is 63 nC at 10V gate drive. These parameters make it suitable for moderate-speed switching applications.
The FQP12N60C is housed in a standard TO-220-3 through-hole package, equipped for board-level mounting in power supplies, inverters, and motor control circuits.
The drain-to-source voltage (Vdss) is rated at 600V.
The continuous drain current is 12A at case temperature (Tc).
It is available in a TO-220-3 through-hole package.
The operating junction temperature range is -55°C to +150°C.
The RoHS status is listed as RoHS3 Compliant, but this information is unverified.
The maximum gate threshold voltage is 4V at a drain current of 250 µA.
The typical on-resistance is 650 mΩ at a gate drive of 10V and drain current of 6A.