| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FQP11P06 is a P-Channel enhancement-mode power MOSFET manufactured by On Semiconductor. It is designed for high-efficiency power management applications requiring a negative voltage supply rail.
Key electrical specifications include a drain-to-source voltage (Vdss) of 60V and a continuous drain current of 11.4A at case temperature (Tc). The device features a maximum on-resistance of 175mOhm at a gate drive of 10V and 5.7A drain current. The gate threshold voltage is a maximum of 4V at 250µA drain current, and the maximum gate-source voltage rating is ±25V.
The FQP11P06 offers a total gate charge of 17nC at 10V and an input capacitance of 550pF at 25V drain-source voltage, enabling efficient switching performance. Maximum power dissipation is 53W at case temperature. The device operates over a junction temperature range of -55°C to 175°C.
Packaged in a standard TO-220-3 through-hole package, the FQP11P06 is suitable for through-hole PCB mounting and is commonly used in power supply circuits, load switching, and DC-DC converter applications.
The FQP11P06 is packaged in a TO-220-3 through-hole package.
The FQP11P06 operates over a junction temperature range of -55°C to 175°C.
The FQP11P06 is listed as RoHS3 Compliant, though this data is unverified and should be treated as low confidence.
The maximum drain-to-source voltage (Vdss) is 60V.
The continuous drain current is 11.4A at case temperature (Tc).
The maximum on-resistance is 175mOhm at a gate drive of 10V and 5.7A drain current.