| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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98 pcs
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98 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQP11N40C is an N-Channel enhancement-mode MOSFET manufactured by On Semiconductor. It is designed for high-voltage switching applications and offers a drain-source voltage rating of 400V and a continuous drain current of 10.5A at case temperature. The device features a maximum on-resistance of 530 mOhm when driven with a 10V gate voltage at 5.25A drain current.
Key electrical characteristics include a gate threshold voltage of 4V maximum at 250µA drain current, input capacitance of 1090 pF at 25V drain-source voltage, and total gate charge of 35 nC at 10V gate drive. The maximum power dissipation is 135W at case temperature, and the operating junction temperature range is -55°C to 150°C.
The FQP11N40C is housed in a TO-220-3 through-hole package, which allows for easy mounting on heatsinks for thermal management. This package is widely used in power electronics for its good thermal performance and mechanical robustness.
Typical applications include switch-mode power supplies, DC-DC converters, motor control circuits, and other high-voltage switching systems where efficiency and reliability are critical.
400V.
TO-220-3 through-hole package.
-55°C to 150°C (junction).
RoHS3 compliant (unverified).
10.5A at case temperature.
Maximum 4V at Id=250µA.
Maximum 530 mOhm at Id=5.25A, Vgs=10V.