DistyParts Icon
FQP10N60C FQP10N60C is an N-Channel power MOSFET from On Semiconductor with a 600V drain-source voltage rating and 9.5A continuous drain current. It is housed in a through-hole TO-220-3 package.
Mfr Part #:

FQP10N60C

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
FQP10N60C is an N-Channel power MOSFET from On Semiconductor with a 600V drain-source voltage rating and 9.5A continuous drain current. It is housed in a through-hole TO-220-3 package.
✓ Total Stock: 15,260 pcs

FQP10N60C Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Fe Components ✓
Non-Authorised Inventory information
15,260 pcs
On Request
15260 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FQP10N60C Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
View Similar Products (0)

FQP10N60C Description

Short technical summary and product information.

The FQP10N60C is an N-Channel enhancement-mode power MOSFET manufactured by ON Semiconductor. It features a drain-to-source voltage (Vdss) of 600 V and a continuous drain current (Id) of 9.5 A at case temperature (Tc). The device has a maximum on-resistance (Rds on) of 730 mOhm at a gate drive of 10 V and a drain current of 4.75 A.

 

This MOSFET uses standard gate drive voltage of 10 V and can tolerate a maximum gate-source voltage of ±30 V. It has a maximum gate charge (Qg) of 57 nC at 10 V and an input capacitance (Ciss) of 2040 pF at 25 V drain-source bias. The threshold voltage (Vgs(th)) is a maximum of 4 V at 250 µA drain current.

 

The device is rated for a maximum power dissipation of 156 W at case temperature (Tc) and can operate over a junction temperature range of -55°C to 150°C. It is supplied in a through-hole TO-220-3 package, suitable for PCB mounting.

FQP10N60C Quick Information

Product Type: Power MOSFET
Series: FQP10N60C
Canonical Name: FQP10N60C N-Channel Power MOSFET
Subcategory: N-Channel Power MOSFET

FQP10N60C Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQP10N60C Features

  • N-Channel power MOSFET design.
  • 600V drain-to-source voltage rating.
  • 9.5A continuous drain current.
  • 730mOhm maximum on-resistance.
  • Through-hole TO-220-3 package.

FQP10N60C Applications

  • Switching power supply circuits.
  • Power factor correction stages.
  • Motor control applications.
  • DC-DC converter designs.

FQP10N60C FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FQP10N60C?

The FQP10N60C has a maximum drain-to-source voltage (Vdss) of 600 V.

What is the maximum drain current of the FQP10N60C?

The maximum continuous drain current (Id) is 9.5 A at case temperature (Tc).

What is the on-resistance of the FQP10N60C?

The maximum on-resistance (Rds on) is 730 mOhm at a gate-source voltage of 10 V and drain current of 4.75 A.

What package does the FQP10N60C come in?

The FQP10N60C is supplied in a through-hole TO-220-3 package.

What is the operating temperature range of the FQP10N60C?

The operating junction temperature range is -55°C to 150°C.

Is the FQP10N60C RoHS compliant?

The FQP10N60C is listed as RoHS3 compliant, though this is not verified against official documentation.

Home
Account

Categories