| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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599 pcs
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599 pcs | On Request | 1 | On Request | On Request | 06+ | On Request | On Request |
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The FQP10N20 is a 200V, 10A N-Channel power MOSFET manufactured by ON Semiconductor. It uses MOSFET (Metal Oxide) technology and is designed for high-efficiency switching and amplification applications. With a maximum drain-source voltage of 200V and a continuous drain current of 10A, it provides a typical on-resistance of 360mOhm at a gate drive voltage of 10V.
The device features a gate threshold voltage of up to 5V and a maximum gate charge of 18nC, enabling efficient gate drive control. The input capacitance is 670pF at 25V drain-source voltage. The MOSFET is housed in a TO-220-3 through-hole package, suitable for easy PCB mounting and thermal management. It supports an operating junction temperature range of -55°C to 150°C and can dissipate up to 87W. These specifications make it suitable for power management circuits, switching regulators, and motor control applications.
200V
TO-220-3 through-hole
-55°C to 150°C (junction temperature)
RoHS3 compliant according to product data (unverified)
360mOhm maximum at 5A drain current and 10V gate-source voltage
18nC maximum at 10V gate-source voltage
670pF maximum at 25V drain-source voltage