Mfr Part #:

FQN1N60CTA

N-Channel power MOSFET from ON Semiconductor with 600V drain-source breakdown voltage and 300mA continuous drain current. Features low on-resistance of 11.5 Ohm and is housed in a through-hole TO-92-3 package.

✓ Total Stock: 10,680 pcs

FQN1N60CTA Available from 1 distributor

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✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Flip Electronics ✓ Non-Authorised Inventory information	10,680 pcs On Request	10680 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

FQN1N60CTA Description

Short technical summary and product information.

The FQN1N60CTA is an N-Channel enhancement mode power MOSFET manufactured by ON Semiconductor using their proprietary planar stripe and DMOS technology. This device is designed to deliver low on-state resistance and superior switching performance, making it suitable for a range of power conversion applications.

Key electrical specifications include a drain-to-source voltage (Vdss) of 600V, a continuous drain current of 300mA at 25°C case temperature, and a maximum on-resistance (Rds(on)) of 11.5 Ohm at Vgs=10V and Id=150mA. The device also features a low typical gate charge of 4.8 nC and is 100% avalanche tested, with a single pulsed avalanche energy rating of 33 mJ.

The FQN1N60CTA is offered in a through-hole TO-226-3 / TO-92-3 package with formed leads, suitable for automated insertion. It is designed for applications such as switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

FQN1N60CTA Quick Information

Product Type: N-Channel Power MOSFET

Series: FQN1N60C

Canonical Name: FQN1N60CTA N-Channel Power MOSFET

Subcategory: N-Channel Power MOSFET

FQN1N60CTA Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

FQN1N60CTA Features

600V drain-to-source voltage rating.
300mA continuous drain current capability.
Low on-resistance of 11.5 Ohm.
100% avalanche tested for reliability.
Through-hole TO-92-3 package.

FQN1N60CTA Applications

Used in switched mode power supplies.
Suitable for power factor correction circuits.
Ideal for electronic lamp ballasts.

FQN1N60CTA FAQs

6 frequently asked questions generated from this part’s specifications.

What is the maximum drain-to-source voltage (Vdss) of the FQN1N60CTA?

The maximum drain-to-source voltage (Vdss) is 600 V.

What is the continuous drain current rating of this MOSFET?

The continuous drain current is 300 mA at a case temperature of 25°C, and 180 mA at 100°C.

What is the on-resistance (Rds(on)) of the FQN1N60CTA?

The maximum on-resistance is 11.5 Ohm at a gate-source voltage of 10 V and a drain current of 150 mA.

What package type is the FQN1N60CTA available in?

It is available in a through-hole TO-226-3 / TO-92-3 (TO-226AA) package with formed leads.

What is the operating junction temperature range for this device?

The operating junction temperature range is -55°C to +150°C.

Is the FQN1N60CTA RoHS compliant?

The RoHS status is listed as RoHS3 Compliant, but this information is unverified and should be confirmed with the manufacturer.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
Current	300 mA
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	170 pF @ 25 V
Lead Style	Formed Leads
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	11.5 Ohm @ 150 mA, 10 V
SVHC Present	Not Present
Supplier Device Package	TO-92-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	4V @ 250µA