| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,750 pcs
|
5750 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,421 pcs
|
3421 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQL40N50 is an N-Channel enhancement-mode MOSFET manufactured by On Semiconductor. It features a drain-to-source voltage rating of 500V and a continuous drain current of 40A. The device has a maximum on-resistance of 110mOhm at Vgs=10V and Id=20A, making it suitable for high-voltage switching applications.
This MOSFET offers a maximum gate charge of 200nC at Vgs=10V and an input capacitance of 7500pF at Vds=25V. The gate threshold voltage is 5V maximum at Id=250µA. The device is designed for through-hole mounting in a TO-264-3 package.
With a maximum power dissipation of 460W and an operating junction temperature range of -55°C to 150°C, the FQL40N50 is suitable for demanding power conversion and motor control applications.
The FQL40N50 has a maximum drain-source voltage of 500V.
The continuous drain current is 40A at case temperature (Tc).
The maximum on-resistance is 110mOhm at Vgs=10V and Id=20A.
The FQL40N50 is available in a TO-264-3 through-hole package.
The operating junction temperature range is -55°C to 150°C.
The maximum gate threshold voltage is 5V at Id=250µA.
The maximum power dissipation is 460W at case temperature (Tc).