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FQI9N50CTU N-Channel MOSFET with 500V drain-source voltage rating and 9A continuous drain current. Features 800mOhm maximum on-resistance and gate threshold voltage of 4V.
Mfr Part #:

FQI9N50CTU

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET with 500V drain-source voltage rating and 9A continuous drain current. Features 800mOhm maximum on-resistance and gate threshold voltage of 4V.
✓ Total Stock: 948 pcs

FQI9N50CTU Available from 1 distributor

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✓ Non-Authorised
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Smaxon Electronics ✓
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948 pcs
On Request
948 pcs On Request 1 On Request On Request 05+ On Request On Request
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FQI9N50CTU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQI9N50CTU Description

Short technical summary and product information.

The FQI9N50CTU is an N-Channel enhancement-mode MOSFET manufactured by On Semiconductor. It is designed for high-voltage switching applications with a drain-to-source voltage rating of 500V and continuous drain current of 9A (at Tc). The device features a maximum on-resistance (Rds(on)) of 800mOhm at Vgs=10V and Id=4.5A, ensuring efficient power handling.

 

Key electrical characteristics include a maximum gate threshold voltage of 4V at Id=250µA, a maximum gate charge of 35nC at Vgs=10V, and an input capacitance of 1030pF at Vds=25V. These parameters make it suitable for applications requiring fast switching and low gate drive power. The device can dissipate up to 135W (at Tc) and operates over a junction temperature range of -55°C to 150°C.

 

The MOSFET is offered in a through-hole I2PAK (TO-262) package with three long leads, providing robust mechanical mounting for power circuits. The package is also available as TO-262-3 and I²Pak alternatives. It is designed for use in switching power supplies, power converters, motor controls, and other high-voltage power management applications.

FQI9N50CTU Quick Information

Product Type: N-Channel MOSFET
Canonical Name: FQI9N50CTU - N-Channel MOSFET, 500V Drain to Source, 9A Drain Current, TO-262 Package
Subcategory: Single N-Channel MOSFET

FQI9N50CTU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQI9N50CTU Features

  • N-Channel MOSFET with 500V drain-source voltage.
  • 9A continuous drain current at Tc condition.
  • 800mOhm maximum on-resistance at 10V gate drive.
  • Through-hole I2PAK (TO-262) package for robust mounting.
  • Operating temperature range of -55°C to 150°C.

FQI9N50CTU Applications

  • Ideal for high-voltage switching power supplies.
  • Suitable for motor control and inverter circuits.
  • Used in power factor correction stages.
  • Applicable in DC-DC converter designs.

FQI9N50CTU FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating of the FQI9N50CTU?

500V.

What is the maximum drain current?

9A at Tc.

What is the package type?

Through-hole I2PAK (TO-262) package.

What is the operating temperature range?

-55°C to 150°C (junction).

Is the device RoHS compliant?

The device is marked as RoHS3 Compliant, but this is unverified.

What is the maximum on-resistance?

800mOhm at Vgs=10V, Id=4.5A.

What is the gate threshold voltage?

Maximum 4V at Id=250µA.

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