| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
12,000 pcs
|
12000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQI8N60CTU is a power MOSFET designed for high-voltage switching applications. It features a drain-source voltage rating of 600V and a continuous drain current of 7.5A at case temperature. The maximum on-resistance is 1.2 Ohm at a gate drive voltage of 10V and drain current of 3.75A.
This device is housed in a TO-262-3 (I2PAK) through-hole package, suitable for high-power applications requiring efficient heat dissipation. The maximum power dissipation is 147W at case temperature, and it operates over a junction temperature range of -55°C to 150°C. Typical applications include power supplies, inverters, and motor control circuits.
The part is listed as RoHS3 compliant (unverified) and has a moisture sensitivity level of 1 (unlimited).
600V.
TO-262-3 Long Leads, I²Pak, TO-262AA (through hole).
-55°C to 150°C (junction temperature).
It is listed as RoHS3 compliant, but this is unverified and should be confirmed.
7.5A at case temperature.