| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,955 pcs
|
2955 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQI7N80TU is an N-Channel power MOSFET from On Semiconductor designed for high-voltage switching applications. It features a maximum drain-source voltage of 800V and continuous drain current of 6.6A at a case temperature of 25°C. The device offers a low on-resistance of 1.5 Ohm maximum at 3.3A drain current and 10V gate voltage, enabling efficient power handling.
Electrical characteristics include a maximum gate charge of 52 nC at 10V, and input capacitance of 1850 pF at 25V drain-source voltage. The recommended gate drive voltage is 10V. Power dissipation is rated at 3.13W at ambient temperature and 167W at case temperature. The operating junction temperature range is -55°C to 150°C.
The MOSFET is housed in a TO-262-3 Long Leads package (I2PAK, TO-262AA) with through-hole mounting. It is suitable for switch-mode power supplies, power inverters, motor control circuits, and other high-voltage switching applications. The device is claimed to be RoHS3 compliant but this is unverified.
800V maximum.
6.6 A at case temperature 25°C.
1.5 Ohm maximum at 3.3 A drain current and 10V gate voltage.
52 nC maximum at 10V gate voltage.
-55°C to 150°C junction temperature.
TO-262-3 Long Leads (I2PAK) through-hole.
Yes, RoHS3 compliant (unverified).