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FQI7N60TU N-Channel MOSFET, 600V drain-source voltage, 7.4A continuous drain current, 1 Ohm on-resistance. Suitable for switched mode power supplies and PFC.
Mfr Part #:

FQI7N60TU

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET, 600V drain-source voltage, 7.4A continuous drain current, 1 Ohm on-resistance. Suitable for switched mode power supplies and PFC.
✓ Total Stock: 1,000 pcs

FQI7N60TU Available from 1 distributor

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✓ Non-Authorised
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Flip Electronics ✓
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1,000 pcs
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FQI7N60TU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQI7N60TU Description

Short technical summary and product information.

The FQI7N60TU is an N-Channel enhancement mode power MOSFET from On Semiconductor's QFET family. It features a drain-source voltage of 600V, continuous drain current of 7.4A at 25°C, and a maximum on-resistance of 1 Ohm at Vgs=10V. The device offers low gate charge (typical 29 nC) and low Crss (typical 16 pF) for efficient switching performance. It is 100% avalanche tested with a single pulsed avalanche energy rating of 580 mJ. The MOSFET is housed in a TO-262 (I2PAK) through-hole package, suitable for high-power applications. Typical applications include switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. The device is RoHS compliant, Pb-Free, and Halide Free.

FQI7N60TU Quick Information

Product Type: MOSFET
Canonical Name: FQI7N60TU N-Channel MOSFET 600V 7.4A I2PAK
Subcategory: Single MOSFET

FQI7N60TU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

FQI7N60TU Features

  • 600V drain-source voltage rating.
  • 7.4A continuous drain current at 25°C.
  • Low on-resistance of 1 Ohm at 10V gate drive.
  • Low gate charge for efficient switching.
  • 100% avalanche tested for ruggedness.

FQI7N60TU Applications

  • Ideal for switched mode power supplies.
  • Used in active power factor correction circuits.
  • Suitable for electronic lamp ballasts.
  • High-voltage DC-DC converter applications.

FQI7N60TU FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

600V.

What package is the FQI7N60TU available in?

TO-262-3 (I2PAK) through-hole package.

What is the operating temperature range?

-55°C to 150°C (junction).

Is the FQI7N60TU RoHS compliant?

Yes, it is RoHS compliant, Pb-Free, and Halide Free.

What is the continuous drain current rating?

7.4A at Tc=25°C, 4.7A at Tc=100°C.

What is the typical gate charge?

29 nC at Vgs=10V.

What is the maximum on-resistance?

1 Ohm at Id=3.7A, Vgs=10V.

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