| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FQI5N60CTU is an N-Channel MOSFET from On Semiconductor designed for high-voltage switching applications. It features a drain-to-source voltage rating of 600V and a continuous drain current of 4.5A at case temperature.
The device has a maximum on-resistance of 2.5 Ohm at 2.25A and 10V gate drive. Gate charge is 19 nC at 10V, and input capacitance is 670 pF at 25V. The gate threshold voltage is 4V at 250µA. Maximum gate-to-source voltage is ±30V.
Power dissipation is rated at 3.13W at ambient temperature and 100W at case temperature. Operating junction temperature range is -55°C to 150°C. The MOSFET is through-hole mounted in a TO-262-3 (I2PAK) package.
600V.
4.5A at case temperature.
2.5 Ohm maximum at 2.25A and 10V gate drive.
19 nC at 10V.
-55°C to 150°C junction.
Through-hole I2PAK (TO-262).
Yes, RoHS3 compliant (unverified).