Mfr Part #:

FQI4N90TU

FQI4N90TU is an N-Channel power MOSFET from ON Semiconductor. It features a 900V drain-source voltage rating and 4.2A continuous drain current.

✓ Total Stock: 7,000 pcs

$ Price Range: $1.12

FQI4N90TU Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Components Technology Group, Inc. ✓ Non-Authorised Inventory information	5,000 pcs On Request	5000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Flip Electronics ✓ Non-Authorised Inventory information	2,000 pcs On Request	2000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

FQI4N90TU Description

Short technical summary and product information.

The FQI4N90TU is an N-Channel power MOSFET manufactured by ON Semiconductor. It uses MOSFET (Metal Oxide) technology and is designed for high-voltage switching applications.

Key electrical specifications include a drain-source voltage (Vdss) of 900V, a continuous drain current of 4.2A at case temperature, and a maximum on-resistance of 3.3 Ohm at 2.1A and 10V gate drive. The gate charge is 30 nC at 10V, and input capacitance is 1100 pF at 25V. The device can dissipate up to 140W at case temperature and 3.13W at ambient.

The MOSFET is housed in a through-hole TO-262-3 Long Leads package (also known as I²Pak or TO-262AA). The supplier device package is I2PAK (TO-262). It operates over a junction temperature range of -55°C to 150°C.

This component is suitable for high-voltage switching circuits such as power supplies, inverters, and motor drives. The through-hole package facilitates mounting on heatsinks for thermal management.

FQI4N90TU Quick Information

Product Type: N-Channel MOSFET

Canonical Name: FQI4N90TU N-Channel Power MOSFET

Subcategory: N-Channel Power MOSFET

FQI4N90TU Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

FQI4N90TU Estimated Pricing

Qty	Low	High
254+	$1.12	$1.12

Estimated market price range - modelled values for guidance only, not live distributor offers.

FQI4N90TU Features

N-Channel MOSFET with 900V drain-source voltage.
Continuous drain current rating of 4.2A.
Low on-resistance of 3.3 Ohm at 10V gate drive.
Through-hole TO-262-3 (I2PAK) package.
Operating temperature range -55°C to 150°C.

FQI4N90TU Applications

High-voltage DC-DC converter circuits.
Switching power supplies and inverters.
Motor control and industrial automation.
Power factor correction (PFC) stages.

FQI4N90TU FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating of the FQI4N90TU?

900V.

What package does the FQI4N90TU come in?

TO-262-3 Long Leads, I²Pak, TO-262AA (through-hole).

What is the operating temperature range?

-55°C to 150°C (junction).

Is the FQI4N90TU RoHS compliant?

RoHS3 Compliant (unverified).

What is the gate charge of the FQI4N90TU?

30 nC at 10V.

What is the on-resistance of the FQI4N90TU?

3.3 Ohm at 2.1A, 10V.

What is the maximum power dissipation?

140W at case temperature, 3.13W at ambient.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
Current	4.2 A (Tc)
Drain to Source Voltage (Vdss)	900 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1100 pF @ 25 V
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	3.13 W (Ta)
Rds On (Max) @ Id, Vgs	3.3 Ohm @ 2.1A, 10V
Supplier Device Package	I2PAK (TO-262)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±30 V
Vgs(th) (Max) @ Id	5 V @ 250µA