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FQI4N80TU The FQI4N80TU is an N-channel MOSFET from onsemi with 800V drain-source voltage and 3.9A continuous drain current. It comes in a TO-262 (I2PAK) through-hole package.
Mfr Part #:

FQI4N80TU

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FQI4N80TU is an N-channel MOSFET from onsemi with 800V drain-source voltage and 3.9A continuous drain current. It comes in a TO-262 (I2PAK) through-hole package.
✓ Total Stock: 3,000 pcs

FQI4N80TU Available from 1 distributor

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FQI4N80TU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQI4N80TU Description

Short technical summary and product information.

The FQI4N80TU is an N-channel power MOSFET manufactured by onsemi. It uses metal-oxide semiconductor technology and is designed for high-voltage switching operations. Key electrical specifications include an 800V drain-to-source voltage (Vdss), 3.9A continuous drain current (Tc), and a maximum on-resistance of 3.6Ω at Vgs=10V and Id=1.95A.

 

Gate drive requirements include a maximum gate threshold voltage of 5V at 250µA, and a recommended drive voltage of 10V. The device can handle a maximum gate-source voltage of ±30V. The maximum gate charge is 25nC at Vgs=10V and maximum input capacitance is 880pF at Vds=25V.

 

Power dissipation is rated at 130W at case temperature and 3.13W at ambient temperature. The junction operating temperature ranges from -55°C to 150°C. Thermal design should account for these limits.

 

The FQI4N80TU is supplied in a TO-262-3 long leads (I²Pak / TO-262AA) package with through-hole mounting. This package is suitable for high-power PCB designs where thermal and mechanical robustness are required.

FQI4N80TU Quick Information

Product Type: Power MOSFET
Canonical Name: N-Channel 800V 3.9A Power MOSFET
Subcategory: Power MOSFET

FQI4N80TU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQI4N80TU Features

  • N-channel MOSFET rated at 800V.
  • Continuous drain current of 3.9A.
  • Maximum on-resistance 3.6Ω.
  • TO-262 I2PAK through-hole package.
  • Operating temperature -55°C to 150°C.

FQI4N80TU Applications

  • High-voltage switch-mode power supplies.
  • DC-DC converters rated up to 800V.
  • Power factor correction boost stages.

FQI4N80TU FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the FQI4N80TU?

800V.

What is the continuous drain current rating?

3.9A at case temperature Tc.

What is the RDS(on) of this MOSFET?

3.6Ω maximum at Id=1.95A and Vgs=10V.

What is the operating temperature range?

-55°C to 150°C junction temperature.

What package is the FQI4N80TU available in?

TO-262-3 long leads (I²Pak / TO-262AA), through-hole mounting.

Is this device RoHS compliant?

Data indicates RoHS3 compliant, but this status is unverified.

What is the gate charge of the FQI4N80TU?

25nC maximum at Vgs=10V.

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