| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,046 pcs
|
1046 pcs | On Request | 1 | On Request | On Request | 06+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQI13N50CTU is an N-Channel enhancement mode MOSFET manufactured by ON Semiconductor. It is designed for high-voltage switching applications and features a maximum drain-to-source voltage (Vdss) of 500V and a continuous drain current (Id) of 13A at case temperature (Tc).
The device has a maximum on-resistance (Rds(on)) of 480 mOhm at a gate drive voltage of 10V and a drain current of 6.5A. The gate threshold voltage (Vgs(th)) is a maximum of 4V at Id = 250 µA. Input capacitance (Ciss) is rated at 2055 pF at Vds = 25V, and total gate charge (Qg) is 56 nC at Vgs = 10V.
The FQI13N50CTU is housed in a through-hole TO-262-3 (I2PAK) package, suitable for PCB mounting. It can dissipate up to 195W of power (Tc) and operates over a junction temperature range of -55°C to 150°C.
The maximum drain-source voltage (Vdss) is 500V.
The maximum continuous drain current (Id) is 13A at case temperature (Tc).
The maximum drain-source on-resistance (Rds(on)) is 480 mOhm at Id = 6.5A and Vgs = 10V.
The operating junction temperature range is -55°C to 150°C.
The FQI13N50CTU is available in a through-hole TO-262-3 (I2PAK) package.
The maximum gate threshold voltage (Vgs(th)) is 4V at Id = 250 µA.
The maximum power dissipation is 195W at case temperature (Tc).