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FQH8N100C

FQH8N100C is an N-Channel enhancement mode power MOSFET from ON Semiconductor. It features a 1000V drain-source voltage, 8A continuous drain current, and 1.45 Ohm maximum on-resistance.

✓ Total Stock: 1,145 pcs

FQH8N100C Available from 1 distributor

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✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Xingangxin ✓ Non-Authorised Inventory information	1,145 pcs On Request	1145 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

FQH8N100C Description

Short technical summary and product information.

The FQH8N100C is an N-Channel enhancement mode power MOSFET manufactured by ON Semiconductor using their proprietary planar stripe and DMOS technology. This device is designed to deliver low on-state resistance and superior switching performance, making it suitable for demanding power conversion applications.

Key electrical specifications include a drain-source voltage (Vdss) of 1000V, continuous drain current of 8A at 25°C case temperature, and a maximum drain-source on-resistance of 1.45 Ohms at Vgs = 10V and Id = 4A. The device offers a low typical gate charge of 53 nC and a low reverse transfer capacitance of 16 pF, contributing to fast switching performance. It is 100% avalanche tested and rated for a single pulsed avalanche energy of 850 mJ.

The FQH8N100C is housed in a TO-247-3 through-hole package, providing excellent thermal performance with a junction-to-case thermal resistance of 0.56 °C/W and a maximum power dissipation of 225W at 25°C case temperature. The device is Pb-Free and RoHS compliant.

FQH8N100C Quick Information

Product Type: MOSFET

Series: FQH8N100C

Canonical Name: FQH8N100C N-Channel MOSFET

Subcategory: Single MOSFET

FQH8N100C Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

FQH8N100C Features

N-Channel MOSFET rated for 1000V drain-source voltage.
Continuous drain current of 8A at 25°C case temperature.
Low on-resistance of 1.45 Ohm maximum at 10V gate drive.
Low gate charge of 53 nC typical for fast switching.
100% avalanche tested with 850 mJ single pulse rating.

FQH8N100C Applications

Ideal for switched mode power supply designs.
Used in active power factor correction circuits.
Suitable for electronic lamp ballast applications.

FQH8N100C FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating of the FQH8N100C?

The drain-source voltage (Vdss) is 1000V.

What is the continuous drain current rating?

The continuous drain current is 8A at Tc = 25°C and 5A at Tc = 100°C.

What is the maximum on-resistance (Rds(on))?

The maximum Rds(on) is 1.45 Ohms at Vgs = 10V and Id = 4A.

What package is the FQH8N100C available in?

The FQH8N100C is available in a TO-247-3 through-hole package.

What is the operating junction temperature range?

The operating junction temperature range is -55°C to +150°C.

Is the FQH8N100C RoHS compliant?

Yes, the device is Pb-Free and RoHS compliant as per the datasheet.

What is the maximum power dissipation?

The maximum power dissipation is 225W at Tc = 25°C.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
Current	8 A
Drain to Source Voltage (Vdss)	1000 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	3220 pF
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	225 W
Rds On (Max) @ Id, Vgs	1.45 Ohm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±30 V
Vgs(th) (Max) @ Id	5 V