| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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126,300 pcs
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126300 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Vgs(th) (Max) @ Id |
FQD9N25TM-F085 is an N-Channel enhancement-mode power MOSFET manufactured by onsemi. It is rated for a drain-to-source voltage of 250V and a continuous drain current of 7.4A at a case temperature Tc. The device features a maximum on-state resistance of 420mOhm at a gate drive of 10V and a drain current of 3.7A. The gate charge is 20nC at Vgs=10V, and input capacitance is 700pF at Vds=25V, indicating moderate switching performance.
The MOSFET is available in a surface-mount TO-252-3 (DPAK) package with a TO-252AA supplier device package. It supports a maximum gate-source voltage of ±30V and has a gate threshold voltage (Vgs(th)) up to 5V at Id=250uA. The power dissipation is rated at 55W when the case is held at 25°C and 2.5W at ambient temperature. The junction temperature operating range is -55°C to 150°C.
With its 250V breakdown voltage and 7.4A current rating, this MOSFET can be used in power conversion circuits, switching power supplies, and other general-purpose switching applications. The surface-mount DPAK package allows for compact PCB assembly.
The maximum drain-to-source voltage (Vdss) is 250V.
It is available in TO-252-3 DPAK (2 Leads + Tab), SC-63, with TO-252AA as the supplier device package.
The junction temperature range is -55°C to 150°C.
It is listed as RoHS3 compliant in the available data.
The maximum continuous drain current is 7.4A at case temperature Tc.
The maximum on-state resistance is 420mOhm at gate-to-source voltage of 10V and drain current of 3.7A.
The gate charge is 20nC at Vgs=10V.