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FQD9N25TM The FQD9N25TM is an N-Channel MOSFET from On Semiconductor rated for 250V drain-source voltage and 7.4A continuous drain current. It comes in a DPAK (TO-252) surface-mount package.
Mfr Part #:

FQD9N25TM

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FQD9N25TM is an N-Channel MOSFET from On Semiconductor rated for 250V drain-source voltage and 7.4A continuous drain current. It comes in a DPAK (TO-252) surface-mount package.
✓ Total Stock: 11,890 pcs

FQD9N25TM Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
10,000 pcs
On Request
10000 pcs On Request 1 On Request On Request On Request On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
1,890 pcs
On Request
1890 pcs On Request 1 On Request On Request 1225+ On Request On Request
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FQD9N25TM Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQD9N25TM Description

Short technical summary and product information.

FQD9N25TM is an N-Channel power MOSFET from On Semiconductor. It is built with metal-oxide semiconductor technology and is intended for switching and amplification in discrete power circuits. The device features a maximum drain-to-source voltage of 250 V and a maximum continuous drain current of 7.4 A at case temperature (Tc).

 

Electrical characteristics include a maximum drain-to-source on-resistance of 420 mΩ at Id = 3.7 A and Vgs = 10 V. Total gate charge is 20 nC at Vgs = 10 V, and input capacitance is 700 pF at Vds = 25 V. The gate threshold voltage is 5 V maximum at Id = 250 µA, with a gate-source voltage rating of ±30 V and a recommended drive voltage of 10 V.

 

Power dissipation is rated at 55 W at Tc = 25°C and 2.5 W at Ta = 25°C. The junction operating temperature range is -55°C to 150°C. The device comes in a surface-mount TO-252-3 (DPak, SC-63) package, with a TO-252AA supplier package and three leads. Per the existing database record, this part is listed as RoHS3 compliant and REACH unaffected.

FQD9N25TM Quick Information

Product Type: N-Channel MOSFET
Canonical Name: N-Channel Power MOSFET, 250V, 7.4A, DPAK
Subcategory: Single MOSFET

FQD9N25TM Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQD9N25TM Features

  • N-Channel MOSFET with 250V drain-source rating.
  • Continuous drain current rating of 7.4A.
  • 420mΩ maximum on-resistance at 10V drive.
  • Surface-mount DPAK package for PCB assembly.
  • Junction temperature range of -55°C to 150°C.

FQD9N25TM Applications

  • Use in high-voltage power switching circuits.
  • Suitable for DC-DC converter output stages.
  • Handles switching loads up to 250V.

FQD9N25TM FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FQD9N25TM?

The maximum drain-to-source voltage (Vdss) is 250 V.

What is the package type?

The FQD9N25TM comes in a TO-252-3 (DPak, SC-63) surface-mount package, with supplier device package TO-252AA.

What is the operating temperature range?

The junction operating temperature range is -55°C to 150°C.

Is the FQD9N25TM RoHS compliant?

According to the existing database record, it is listed as RoHS3 compliant, though this status is not independently verified.

What is the maximum continuous drain current?

The maximum continuous drain current is 7.4 A at case temperature Tc.

What is the maximum on-resistance?

The maximum drain-to-source on-resistance is 420 mΩ at Id=3.7A and Vgs=10V.

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