Mfr Part #:

FQD8P10TM

P-Channel MOSFET with 100V drain-source voltage and 6.6A drain current. Features 530mOhm on-resistance at 10V gate drive.

✓ Total Stock: 106,627 pcs

FQD8P10TM Available from 4 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Romaks Technologies ✓ Non-Authorised Inventory information	90,400 pcs On Request	90400 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Smaxon Electronics ✓ Non-Authorised Inventory information	11,500 pcs On Request	11500 pcs	On Request	1	On Request	On Request	14+	On Request	On Request
Optech Co.,Limited ✓ Non-Authorised Inventory information	3,520 pcs On Request	3520 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	1,207 pcs On Request	1207 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

FQD8P10TM Description

Short technical summary and product information.

The FQD8P10TM is a P-Channel enhancement-mode MOSFET manufactured by ON Semiconductor. It is designed for high-efficiency power management applications. With a drain-source voltage rating of 100V and continuous drain current of 6.6A, it offers a maximum on-resistance of 530mOhm at 10V gate drive. The device features a gate threshold voltage of 4V at 250µA and a maximum gate charge of 15nC at 10V. Input capacitance is 470pF at 25V drain-source. The MOSFET is housed in a surface-mount DPAK (TO-252) package, suitable for automated assembly. Operating junction temperature range is -55°C to 150°C. Power dissipation is 2.5W at ambient and 44W at case temperature. This component is RoHS3 compliant and has a moisture sensitivity level of 1 (unlimited). It is commonly used in load switching, battery protection, and DC-DC converter circuits.

FQD8P10TM Quick Information

Product Type: MOSFET

Series: QFET

Canonical Name: FQD8P10TM P-Channel MOSFET

Subcategory: P-Channel MOSFET

FQD8P10TM Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

FQD8P10TM Features

P-Channel MOSFET with 100V drain-source rating.
6.6A continuous drain current capability.
Low on-resistance of 530mOhm at 10V.
Surface mount DPAK package for automated assembly.
Wide operating temperature range -55°C to 150°C.

FQD8P10TM Applications

Power management in 100V systems.
Load switching for high-side or low-side.
Battery protection in portable devices.
DC-DC converter circuits.

FQD8P10TM FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating of the FQD8P10TM?

100V.

What package is the FQD8P10TM available in?

Surface mount DPAK (TO-252-3, DPak, SC-63) with supplier device package TO-252AA.

What is the operating temperature range?

-55°C to 150°C (junction temperature).

Is the FQD8P10TM RoHS compliant?

RoHS3 compliant (unverified).

What is the on-resistance of the FQD8P10TM?

530mOhm maximum at 3.3A and 10V gate drive.

What is the gate charge of the FQD8P10TM?

15nC maximum at 10V.

What is the input capacitance of the FQD8P10TM?

470pF maximum at 25V drain-source.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
AEC Qualified	Yes
Automotive Grade	Yes
Current	6.6A (Tc)
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	470 pF @ 25 V
Lead Style	Gull Wing
Medical Grade	Yes
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	2.5W (Ta)
Rds On (Max) @ Id, Vgs	530mOhm @ 3.3A, 10V
SVHC Present	Not Present
Storage Temperature	-55°C ~ 150°C
Supplier Device Package	TO-252AA
Tape & Reel	Yes
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	4V @ 250µA