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FQD8P10TF The FQD8P10TF is a P-Channel MOSFET from On Semiconductor. It features 100V drain-source voltage and 6.6A continuous drain current.
Mfr Part #:

FQD8P10TF

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FQD8P10TF is a P-Channel MOSFET from On Semiconductor. It features 100V drain-source voltage and 6.6A continuous drain current.
✓ Total Stock: 4,000 pcs

FQD8P10TF Available from 1 distributor

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✓ Non-Authorised
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Smaxon Electronics ✓
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4,000 pcs
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4000 pcs On Request 1 On Request On Request 11+ On Request On Request
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FQD8P10TF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQD8P10TF Description

Short technical summary and product information.

The FQD8P10TF is a P-Channel enhancement-mode MOSFET manufactured by On Semiconductor. It is designed for power switching applications requiring high efficiency and reliability. The device features a drain-to-source voltage (Vdss) of 100V and a continuous drain current of 6.6A at case temperature. The maximum on-resistance (Rds(on)) is 530mOhm at Vgs=10V and Id=3.3A. The gate threshold voltage is 4V at Id=250µA, and the maximum gate-source voltage is ±30V. Gate charge is 15nC at Vgs=10V, and input capacitance is 470pF at Vds=25V. Power dissipation is rated at up to 44W at case temperature and 2.5W at ambient. The device operates over a junction temperature range of -55°C to 150°C. The FQD8P10TF is offered in a surface-mount DPAK (TO-252AA) package, which is suitable for compact PCB designs. This MOSFET is RoHS3 compliant, REACH unaffected, and has an MSL of 1 (unlimited). It is ideal for load switching, power management, and DC-DC converter applications where P-Channel devices are preferred for high-side switching.

FQD8P10TF Quick Information

Product Type: MOSFET - Single
Canonical Name: FQD8P10TF P-Channel MOSFET
Subcategory: P-Channel MOSFET

FQD8P10TF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQD8P10TF Features

  • P-Channel MOSFET rated for 100V drain-source voltage.
  • Maximum continuous drain current of 6.6A.
  • Low on-resistance of 530mOhm at 10V gate drive.
  • Surface-mount DPAK package for compact designs.
  • RoHS3 compliant and REACH unaffected.

FQD8P10TF Applications

  • Suitable for power management in portable electronics.
  • Used in load switching and high-side switch applications.
  • Ideal for DC-DC converter circuits.
  • Applicable in battery protection and charging circuits.

FQD8P10TF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FQD8P10TF?

100V.

What package does the FQD8P10TF come in?

TO-252-3 (DPak, SC-63) surface-mount package with supplier device package TO-252AA.

What is the operating temperature range of the FQD8P10TF?

-55°C to 150°C junction temperature.

Is the FQD8P10TF RoHS compliant?

RoHS3 compliant.

What is the gate charge of the FQD8P10TF?

15nC at Vgs=10V.

What is the maximum power dissipation of the FQD8P10TF?

44W at case temperature, 2.5W at ambient.

What is the input capacitance of the FQD8P10TF?

470pF at Vds=25V.

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