| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
56,020 pcs
|
56020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,600 pcs
|
1600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,185 pcs
|
1185 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
827 pcs
|
827 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
85 pcs
|
85 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
58 pcs
|
58 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQD7P20TM is a P-Channel enhancement mode power MOSFET manufactured by On Semiconductor using their proprietary planar stripe and DMOS technology. This device is designed to reduce on-state resistance and provide superior switching performance and high avalanche energy strength.
Key electrical specifications include a maximum drain-source voltage of -200V, continuous drain current of -5.7A at 25°C case temperature, and a maximum on-state resistance of 690mΩ at VGS = -10V and ID = -2.85A. The device features a low gate charge of 19nC (typical) and low reverse transfer capacitance of 25pF (typical), contributing to efficient switching.
The FQD7P20TM is suitable for switched mode power supplies, audio amplifiers, DC motor control, and variable switching power applications. It is 100% avalanche tested and offers a single pulsed avalanche energy rating of 570mJ.
The device is available in a TO-252-3 (DPAK) surface-mount package, also known as TO-252AA, and is designed for surface mount mounting. It operates over a junction temperature range of -55°C to +150°C.
The maximum drain-source voltage (VDSS) is -200V.
The continuous drain current is -5.7A at Tc=25°C and -3.6A at Tc=100°C.
The maximum on-resistance (RDS(on)) is 690mΩ at VGS=-10V and ID=-2.85A.
The operating junction temperature range is -55°C to +150°C.
The device is available in a TO-252-3 (DPAK) surface-mount package, also known as TO-252AA.
The RoHS status is listed as RoHS3 compliant, but this is unverified and should be confirmed with the manufacturer.