| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
12,500 pcs
|
12500 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
8,093 pcs
|
8093 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQD7P06TM is a P-Channel enhancement-mode MOSFET manufactured by ON Semiconductor. It is designed for high-efficiency power management applications requiring a negative voltage supply. The device features a maximum drain-source voltage of 60V and a continuous drain current of 5.4A at case temperature (Tc). With a maximum on-resistance of 451mOhm at 2.7A and 10V gate drive, it offers efficient switching performance.
The MOSFET has a gate threshold voltage of 4V at 250µA and a maximum gate charge of 8.2nC at 10V, enabling fast switching. Input capacitance is 295pF at 25V drain-source voltage. The device can dissipate up to 28W at case temperature 25°C and operates over a junction temperature range of -55°C to 150°C.
The FQD7P06TM is housed in a surface-mount TO-252-3 (DPak) package, also known as SC-63, with a supplier device package of TO-252AA. It is suitable for automated assembly and space-constrained designs. The part is RoHS3 compliant and has a moisture sensitivity level of 1 (unlimited).
60V.
5.4A at case temperature (Tc).
451mOhm maximum at 2.7A and 10V gate drive.
-55°C to 150°C junction temperature.
Surface mount TO-252-3 (DPak) package.
Yes, RoHS3 compliant.
8.2nC maximum at 10V gate-source voltage.