| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
51,117 pcs
|
51117 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
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| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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The FQD7N20TM is an N-Channel power MOSFET from onsemi, designed for switching applications. It features a maximum drain-source voltage of 200V and continuous drain current of 5.3A at case temperature.
Key electrical characteristics include a maximum on-resistance of 690mOhm at 2.65A and 10V gate drive, gate threshold voltage of 5V at 250µA, and gate charge of 10nC at 10V. Input capacitance is 400pF at 25V drain-source.
The device is housed in a surface mount DPAK (TO-252) package, suitable for automated assembly. It operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 45W at case temperature.
200V.
Surface mount DPAK (TO-252-3, DPak, SC-63) with supplier package TO-252AA.
-55°C to 150°C junction temperature.
RoHS3 compliant (unverified).
5.3A at case temperature.
5V maximum at 250µA drain current.
690mOhm maximum at 2.65A and 10V gate drive.