| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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22,000 pcs
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22000 pcs | On Request | 1 | On Request | On Request | 07+ | On Request | On Request |
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The FQD7N20TF is an N-Channel enhancement mode MOSFET manufactured by On Semiconductor using advanced MOSFET technology. It is designed for high efficiency power switching applications.
Key electrical specifications include a drain-source voltage (Vdss) of 200V and a continuous drain current of 5.3A at case temperature. The device features a low on-resistance of 690mOhm maximum at Vgs=10V and Id=2.65A, enabling efficient power conversion. The gate threshold voltage is 5V maximum at Id=250µA, and the maximum gate-source voltage rating is ±30V.
The MOSFET is housed in a surface mount DPAK (TO-252) package, which provides excellent thermal performance with a maximum power dissipation of 45W at case temperature. The operating junction temperature range is -55°C to 150°C, making it suitable for demanding environments.
This device is ideal for switching power supplies, DC-DC converters, motor control circuits, and other power management applications where high voltage and moderate current handling are required.
The drain-source voltage (Vdss) is 200V.
The continuous drain current is 5.3A at case temperature.
The maximum on-resistance is 690mOhm at Vgs=10V and Id=2.65A.
The device is housed in a surface mount DPAK (TO-252) package.
The operating junction temperature range is -55°C to 150°C.
The device is listed as RoHS3 Compliant, though this is unverified.