FQD7N20TF FQD7N20TF is an N-Channel MOSFET from On Semiconductor with 200V drain-source voltage and 5.3A continuous drain current. It features a low on-resistance of 690mOhm and is housed in a DPAK package.
Mfr Part #:

FQD7N20TF

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
FQD7N20TF is an N-Channel MOSFET from On Semiconductor with 200V drain-source voltage and 5.3A continuous drain current. It features a low on-resistance of 690mOhm and is housed in a DPAK package.
✓ Total Stock: 22,000 pcs

FQD7N20TF Available from 1 distributor

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22000 pcs On Request 1 On Request On Request 07+ On Request On Request

FQD7N20TF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FQD7N20TF Description

Short technical summary and product information.

The FQD7N20TF is an N-Channel enhancement mode MOSFET manufactured by On Semiconductor using advanced MOSFET technology. It is designed for high efficiency power switching applications.

 

Key electrical specifications include a drain-source voltage (Vdss) of 200V and a continuous drain current of 5.3A at case temperature. The device features a low on-resistance of 690mOhm maximum at Vgs=10V and Id=2.65A, enabling efficient power conversion. The gate threshold voltage is 5V maximum at Id=250µA, and the maximum gate-source voltage rating is ±30V.

 

The MOSFET is housed in a surface mount DPAK (TO-252) package, which provides excellent thermal performance with a maximum power dissipation of 45W at case temperature. The operating junction temperature range is -55°C to 150°C, making it suitable for demanding environments.

 

This device is ideal for switching power supplies, DC-DC converters, motor control circuits, and other power management applications where high voltage and moderate current handling are required.

FQD7N20TF Quick Information

Product Type: MOSFET
Canonical Name: FQD7N20TF N-Channel MOSFET 200V 5.3A DPAK
Subcategory: Single N-Channel

FQD7N20TF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FQD7N20TF Features

  • N-Channel MOSFET with 200V drain-source voltage.
  • Continuous drain current rating of 5.3A.
  • Low on-resistance of 690mOhm at 10V gate drive.
  • Surface mount DPAK (TO-252) package for easy assembly.
  • Wide operating temperature range from -55°C to 150°C.

FQD7N20TF Applications

  • Ideal for switching power supply circuits.
  • Used in DC-DC converter designs.
  • Suitable for motor control applications.
  • Applicable in power management systems.

FQD7N20TF FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FQD7N20TF?

The drain-source voltage (Vdss) is 200V.

What is the continuous drain current of the FQD7N20TF?

The continuous drain current is 5.3A at case temperature.

What is the on-resistance of the FQD7N20TF?

The maximum on-resistance is 690mOhm at Vgs=10V and Id=2.65A.

What package does the FQD7N20TF come in?

The device is housed in a surface mount DPAK (TO-252) package.

What is the operating temperature range of the FQD7N20TF?

The operating junction temperature range is -55°C to 150°C.

Is the FQD7N20TF RoHS compliant?

The device is listed as RoHS3 Compliant, though this is unverified.

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