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FQD7N20LTM N-Channel MOSFET with 200V drain-source voltage and 5.5A continuous drain current. Surface mount in TO-252 DPAK package.
Mfr Part #:

FQD7N20LTM

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET with 200V drain-source voltage and 5.5A continuous drain current. Surface mount in TO-252 DPAK package.
✓ Total Stock: 38,398 pcs

FQD7N20LTM Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
37,500 pcs
On Request
37500 pcs On Request 1 On Request On Request On Request On Request On Request
Braun Electronic Components ✓
Non-Authorised Inventory information
449 pcs
On Request
449 pcs On Request 1 On Request On Request On Request On Request On Request
MW.FEP S.p.A. ✓
Non-Authorised Inventory information
449 pcs
On Request
449 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FQD7N20LTM Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQD7N20LTM Description

Short technical summary and product information.

The FQD7N20LTM is an N-Channel MOSFET from On Semiconductor, designed for power switching applications. It features a drain-source voltage (Vdss) of 200 V and a continuous drain current (Id) of 5.5 A at Tc. The device has a maximum on-resistance of 750 mOhm at 2.75 A and 10 V gate drive. Gate charge is 9 nC at 5 V, and input capacitance is 500 pF at 25 V. The gate threshold voltage is 2 V maximum at 250 µA. Maximum power dissipation is 45 W at Tc and 2.5 W at Ta. The MOSFET operates over a junction temperature range of -55°C to 150°C. It is supplied in a surface-mount TO-252-3 (DPak) package, suitable for automated assembly. The part is RoHS3 compliant (unverified) and has an MSL rating of 1 (unlimited).

FQD7N20LTM Quick Information

Product Type: MOSFET
Canonical Name: FQD7N20LTM N-Channel MOSFET
Subcategory: Single MOSFET

FQD7N20LTM Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQD7N20LTM Features

  • N-Channel MOSFET with 200V drain-source voltage.
  • Continuous drain current of 5.5A.
  • Low on-resistance of 750mOhm.
  • Surface mount DPAK-3 package.
  • Operating temperature range -55°C to 150°C.

FQD7N20LTM Applications

  • Ideal for switching power supplies.
  • Used in motor control circuits.
  • Suitable for DC-DC converters.
  • Power management in consumer electronics.

FQD7N20LTM FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

200 V.

What is the continuous drain current?

5.5 A at case temperature (Tc).

What is the package type?

TO-252-3, DPak (2 Leads + Tab), SC-63; supplier device package is TO-252 (D-Pak).

What is the operating temperature range?

-55°C to 150°C (junction temperature).

Is this MOSFET RoHS compliant?

RoHS3 compliant, but this status is unverified and low confidence.

What is the maximum on-resistance?

750 mOhm at 2.75 A drain current and 10 V gate-source voltage.

What is the gate threshold voltage?

2 V maximum at 250 µA drain current.

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