| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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100 pcs
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100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQD7N20LTF is an N-Channel enhancement-mode MOSFET manufactured by On Semiconductor using MOSFET (Metal Oxide) technology. It is designed for high-efficiency power management applications requiring a drain-source voltage rating of 200V and a continuous drain current of 5.5A at 25°C case temperature.
Key electrical characteristics include a maximum on-resistance of 750mOhm at a gate drive of 10V and a drain current of 2.75A. The device has a gate threshold voltage of 2V maximum at 250µA drain current. It supports gate drive voltages of 5V and 10V for optimized Rds(on) performance. The input capacitance is 500pF at 25V drain-source bias, and the maximum gate charge is 9nC at 5V gate-source voltage.
The MOSFET is rated for a maximum power dissipation of 45W at the case temperature (Tc=25°C) and 2.5W at ambient temperature (Ta=25°C). It operates over a junction temperature range of -55°C to 150°C. The device is supplied in a surface-mount TO-252-3 (DPak) package with the supplier device package designation TO-252AA.
The maximum drain-source voltage (Vdss) is 200V.
The continuous drain current (Id) at 25°C case temperature is 5.5A.
The maximum on-resistance (Rds on) is 750mOhm at Id=2.75A and Vgs=10V.
The operating junction temperature range is -55°C to 150°C.
The device is available in a surface-mount TO-252-3 (DPak) package, also known as TO-252AA.
The maximum gate threshold voltage (Vgs(th)) is 2V at Id=250µA.
The maximum power dissipation is 45W at case temperature (Tc=25°C) and 2.5W at ambient temperature (Ta=25°C).