FQD7N10TM FQD7N10TM is a 100V N-Channel MOSFET from On Semiconductor. It features a continuous drain current of 5.8A and a maximum on-resistance of 350 mΩ.
Mfr Part #:

FQD7N10TM

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
FQD7N10TM is a 100V N-Channel MOSFET from On Semiconductor. It features a continuous drain current of 5.8A and a maximum on-resistance of 350 mΩ.
✓ Total Stock: 3,492 pcs

FQD7N10TM Available from 2 distributors

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FQD7N10TM Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FQD7N10TM Description

Short technical summary and product information.

The FQD7N10TM is a 100V N-Channel enhancement mode power MOSFET produced using Fairchild Semiconductor's planar stripe DMOS technology. This device is designed to minimize on-state resistance and provide superior switching performance.

 

Key electrical specifications include a maximum drain-source voltage of 100V, a continuous drain current of 5.8A at 25°C case temperature, and a maximum on-resistance of 350 mΩ at 10V gate drive. The device offers a low typical gate charge of 5.8 nC and a low typical reverse transfer capacitance of 10 pF, enabling fast switching in power conversion circuits.

 

The FQD7N10TM is housed in a surface mount TO-252-3 (DPak) package, also known as SC-63, with the supplier device package designation TO-252AA. It is rated for operation over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 25W at 25°C case temperature. The device is 100% avalanche tested and has a single pulsed avalanche energy rating of 50 mJ.

FQD7N10TM Quick Information

Product Type: MOSFET
Series: FQD7N10
Canonical Name: FQD7N10TM N-Channel MOSFET
Subcategory: Power MOSFET

FQD7N10TM Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQD7N10TM Features

  • 100V maximum drain-source voltage.
  • 5.8A continuous drain current rating.
  • 350 mΩ maximum on-resistance at 10V.
  • Low gate charge of 5.8 nC typical.
  • Surface mount DPAK (TO-252) package.

FQD7N10TM Applications

  • Used in high efficiency DC/DC converters.
  • Suitable for DC motor control circuits.
  • Ideal for audio amplifier applications.
  • Used in power management systems.

FQD7N10TM FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FQD7N10TM?

The maximum drain-source voltage (Vdss) is 100 V.

What is the continuous drain current rating of the FQD7N10TM?

The continuous drain current is 5.8 A at a case temperature of 25°C.

What is the on-resistance of the FQD7N10TM?

The maximum on-resistance is 350 mΩ at a gate-source voltage of 10 V and drain current of 2.9 A.

What is the operating temperature range of the FQD7N10TM?

The operating junction temperature range is -55°C to 150°C.

Is the FQD7N10TM RoHS compliant?

Yes, the datasheet states the device is RoHS compliant.

What package does the FQD7N10TM come in?

The device is available in a surface mount TO-252-3 (DPak) package, also known as SC-63.

What is the gate threshold voltage of the FQD7N10TM?

The maximum gate threshold voltage is 4 V at a drain current of 250 µA.

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